收藏本站
NP60N04MUG
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
SYMBOL
I DSS
I GSS
V GS(th)
TEST CONDITIONS
V DS = 40 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
2.0
TYP.
MAX.
1
± 100
4.0
UNIT
μ A
nA
V
<R>
Forward Transfer Admittance
Note
| y fs |
V DS = 5 V, I D = 30 A
19
38
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = 10 V, I D = 30 A
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 20 V, I D = 30 A,
V GS = 10 V,
R G = 0 Ω
5.0
3200
320
210
21
10
48
6.3
m Ω
pF
pF
pF
ns
ns
ns
Fall Time
t f
10
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = 32 V,
V GS = 10 V,
I D = 60 A
60
15
21
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 60 A, V GS = 0 V
I F = 60 A, V GS = 0 V,
di/dt = 100 A/ μ s
0.95
33
40
1.5
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 Ω
V DD
Data Sheet D18663EJ2V0DS
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP60N055KUG-E1-AY MOSFET N-CH 55V 60A TO-263
NP70N04MUG-S18-AY MOSFET N-CH 40V 70A TO-220
NP70N10KUF-E1-AY MOSFET N-CH 100V 70A TO-263
NP80N03KDE-E1-AY MOSFET N-CH 30V 80A TO-263
NP80N03MLE-S18-AY MOSFET N-CH 30V 80A TO-220
NP80N04MHE-S18-AY MOSFET N-CH 40V 80A TO-220
NP80N04NHE-S18-AY MOSFET N-CH 40V 80A TO-262
NP80N04NLG-S18-AY MOSFET N-CH 40V 80A TO-262
相关代理商/技术参数
NP60N04MUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04MUK-S18-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-220
NP60N04NUK-S18-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:POWER DEVICE E AUTOMOTIVE MOS MP-3ZP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-252
NP60N04VUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N055KUG-E1-AY 功能描述:MOSFET N-CH 55V 60A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP60N055MUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR